首页> 美国政府科技报告 >Scanning Tunneling Microscopy/Spectroscopy Studies of Nanostructures in GaAs
【24h】

Scanning Tunneling Microscopy/Spectroscopy Studies of Nanostructures in GaAs

机译:扫描隧道显微镜/光谱学研究纳米结构的Gaas

获取原文

摘要

This report briefly summarizes work completed on the above grant during the timeperiod of December 1, 1989 to November 30, 1995. The grant has concentrated on Scanning Tunneling Microscopy/Spectroscopy (STM/STS) studies of atomic-scale structure and morphology in semiconductors. Earlier work on this grant, which was initiated in 1990, was extended the past three years (partially through the addition of AASERT funding) to include efforts to develop microcathodoluminescence (micro CL), scanning tunneling luminescence (STL), and near-field scanning optical microscopy (NSOM) for investigating local optical properties of surfaces and small structures and relating these to morphological properties and structural defects.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号