Quantum 1/f Optimization of New Materials and Devices, Multiplexers, Low-Power Electronics and Investigation of 1/f Negative Entropystates

摘要

Application of the quantum 1/f noise theory to the control of frequency fluctuations in quartz is extended to low-Q and SAW resonators. The results are universal and are in good agreement with the experiment. The 1/f noise in GaN is calculated and found 3-10 times lower than in GaAs. The quantum 1/f theory was reformulated to put in evidence the manifest entropy conservation of the quantum 1/f fluctuation process with the help of the Quantum Information Theory and the notion of negative quantum conditional entropy. Furthermore. a method of gate current suppression in HFET with high dielectric constant gate insulation and a two-dimensional all-optical time-division multiplexing system based on spectral holography and 4-wave-mixing were found. Other important new developments reported include the prediction of fundamental 1/f fluctuations of the quantum 1/f decoherence rate and of the radiation resistance of antennas. The quantum 1/f theory was applied to flexible ultrathin semiconductor samples, as well as to nanoscale semiconductor and magnetic structures. The 1/f noise caused by bending is calculated for the first time. 1/f noise in multiple quantum wells is calculated for the case of the nonlinear holographic medium used in the all-optical TDM. The quantum 1/f theory also allowed the first calculation of 1/f noise in spin-polarized transport, with applications to spin- valves, spin-transistors and giant magnetoresistance effects. The present report allows to design low-noise, low phase-noise and lower-power electronic devices and systems.