Electron Assisted Deposition of Cubic Boron Nitride by RF Magnetron Sputtering

摘要

Cubic boron nitride (cBN) is deposited on silicon by means of radio- frequency (RF) magnetron sputtering in nitrogen using a hexagonal boron nitride target with the assistance of a simultaneous electron bombardment of the growing surface. Unlike most thin-film deposition processes for cBN, intentional bombardment of the growing surface by ion beams within specific ranges in energy and flux is not required for this process to achieve high purity cBN films. With electrons bombarding the growing surface at a current density of 140 mA/sq cm or higher, pure (according to FTIR spectra) cBN films are deposited on silicon substrates at temperatures above 750 deg C. Effects of electron current density and nitrogen gas pressure on the synthesis of cBN films will be discussed.