High Density HGCDTE Avalanche Photodiode Array Performance

摘要

Recent advances in Infrared materials and device design have been applied to developing a new class of high sensitivity It-Vi Avalanche Photodiodes (APDs) for eyesafe applications. These devices utilize Hg(1-x) Cd(x) Te and are designed using separate absorber and avalanche layers. Low excess noise at high gains is achieved by exploiting the natural resonance for hole avalanche multiplication in the gain region while high quantum efficiency is obtained by separately optimizing the thickness and field in the absorbing regions. The excellent k-value (ratio of electron to hole ionization coefficient) 0.1 achieved for Hg(1-x) Cd(x) Te is particularly advantageous in the development of APD arrays for 3D LADAR imaging applications.