In an avalanche photodiode hgcdte sensitive to radiation of wavelength which is greater at 2 mm.

摘要

In a crystal 1 of hgcdte, it is chosen for the spectral response desired, there is obtained a pn junction at low concentrations in the vicinity of the junction, by penetrations of impurities on the basis of a polished surface 10 and impugned chemically, and it enlightened the p area 6. The current of darkness of the photodiode is 0,1acm inferior at ambient temperature. The noise factor surplus inferior has 0,4. / p & & p & the photodiode of the invention is used for the detection of the signals transmitted on the optical fibers in a fluorinated glass, for example.