METHOD OF MANUFACTURING HgCdTe PHOTODIODE TO IMPROVE PERFORMANCE OF PHOTODIODE

摘要

PURPOSE: A method of manufacturing an HgCdTe photodiode is provided to improve remarkably the performance of the photodiode by forming a single crystal CdTe epitaxial layer on an HgCdTe thin film without exposure of the thin film to the atmosphere. CONSTITUTION: A P type HgCdTe thin film(17) is grown on a substrate(16). A CdTe or Cd1-zZnzTe(0z1) epitaxial layer(18) is sequentially grown on the HgCdTe thin film without exposure of the thin film to the atmosphere. The thin film is partially exposed to the outside by etching selectively the epitaxial layer. The P type of the exposed thin film is transformed into an N type by using ECR plasma. The epitaxial layer is used as a protection layer of a photodiode.