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METHOD OF CADMIUM MOLECULAR BEAM BASED ANNEALS FOR MANUFACTURE OF HGCDTE PHOTODIODE ARRAYS
METHOD OF CADMIUM MOLECULAR BEAM BASED ANNEALS FOR MANUFACTURE OF HGCDTE PHOTODIODE ARRAYS
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机译:HGCDTE光电二极管阵列的基于镉离子束的退火方法
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摘要
In the preferred embodiment of the present invention, narrow bandgap II-VI compound semiconductor HgxCd1-xTe (0.1≦x≦0.5) (HgCdTe) wafers are annealed under Cd supersaturated conditions by exposing the HgCdTe planar or mesa surfaces to a Cd molecular beam in a vacuum deposition system before, during, and/or after anneals performed during individual photodiode fabrication process steps or HgCdTe epitaxial growth steps for eliminating or neutralizing the bulk or interfacial defects.
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机译:在本发明的优选实施例中,对窄带隙II-VI化合物半导体Hg x Sub> Cd 1-x Sub> Te(0.1≤x≤0.5)(HgCdTe)晶片进行退火。在Cd过饱和条件下,通过在单个光电二极管制造工艺步骤或HgCdTe外延生长步骤进行的退火之前,期间和/或之后,将HgCdTe平面或台面表面暴露在真空沉积系统中的Cd分子束中,以消除或中和块体或界面缺陷。
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