Development of Molecular Beam Epitaxially Grown Hg_(1-x)Cd_xTe for High-Density Vertically-Integrated Photodiode-Based Focal Plane Arrays

摘要

Hg_(1-x)Cd_xTe samples of x ~ 0.3(in the midwave infrared,or MWIR,spectral band)were prepared by molecular beam epitaxy(MBE)for fabrication into 30-mu m-pitch,256 x 256,front-side-illuminated,high-density vertically-integrated photodiode(HDVIP)focal plane arrays(FPAs).These MBE Hg_(1-x)Cd_xTe samples were grown on CdZnTe(211)substrates prepared in this laboratory;they were ~10-mu m thick and were doped with indium to ~5 x 1014 cm"3.Standard HDVIP process flow was employed for array fabrication.Excellent array performance data were obtained from these MWIR arrays with MBE HgCdTe material.The noise-equivalent differential flux(NEAO)operability of the best array is 99.76%,comparable to the best array obtained from liquid-phase epitaxy(LPE)material prepared in this laboratory.