FORMATION METHOD FOR MERCURY CADMIUM TELLURIUM THIN FILM BASED ON MOLECULAR BEAM AND SUBSTRATE HOLDER THEREOF

摘要

PURPOSE: To prevent temperature drop caused by changes in substrate temperature during the growth of an HgCdTe thin film and enhance crystal properties by loading the substrate on the surface of a susceptor formed with a carbonic raw material of a substrate holder and forming the HgCdTe film. ;CONSTITUTION: The surface of a susceptor 12 of a substrate holder 1 is formed with a carbonic raw material having a high thermal emissivity. A substrate 3 is loaded on the surface of the susceptor 12. A mercury cadmium tellurium (HgCdTe) thin film is formed on the substrate 3 by a molecular epitaxial method (MBE). A thermocouple 6 is loaded near the susceptor in such a fashion that it may not come into contact with the surface of the susceptor 12 of the substrate holder 1 and the substrate holder 1 is rotated, thereby making an MBE growth. Therefore, thermal radiation diffusion takes place to a satisfactory extent which is equivalent to the HgCdTe thin film having a high thermal emissivity deposited on the substrate, which has lowered the temperature in the substrate and produced a stabilized state already.;COPYRIGHT: (C)1994,JPO&Japio