首页> 外国专利> SUBSTRATE HOLDER FOR MERCURY CADMIUM TELLURIUM THIN FILM OF MOLECULAR BEAM EPITAXY DEVICE

SUBSTRATE HOLDER FOR MERCURY CADMIUM TELLURIUM THIN FILM OF MOLECULAR BEAM EPITAXY DEVICE

机译:分子束表皮装置的碲化镉镉薄膜的基板支架

摘要

PURPOSE: To prevent the dropping of a substrate temp. at the time of growing the thin film and to obtain the thin film having high crystallinity and uniformity by coating a substrate holder with a carbon film. ;CONSTITUTION: The carbon film 4 having a large coefft. of absorption is formed by a method, such as vacuum vapor deposition method, on a substrate holder 1 for forming the HgCdTe thin film of a molecular epitaxy device. The substrate for deposition of HgCdTe, for example, a substrate 2 consisting of molybdenum, is fixed by a metal 3 of a low m.p. to this holder and the HgCdTe thin film is deposited on the substrate 2. As a result, the substrate temp. is extremely stabilized during the growth of the thin film and the HgCdTe thin film having the high uniformity and the good-quality crystallinity is formed. Gallium may be applied on the substrate holder made of the molybdenum in place of the carbon film 4 and this holder may be subjected to a heating treatment in a vacuum to coat the holder surface with the compd. of the gallium and molybdenum.;COPYRIGHT: (C)1993,JPO&Japio
机译:目的:为防止基材温度下降。在生长薄膜时,通过用碳膜涂覆衬底支架来获得具有高结晶度和均匀性的薄膜。 ;组成:具有大系数的碳膜4。通过诸如真空气相沉积法之类的方法,在用于形成分子外延器件的HgCdTe薄膜的基板支架1上形成吸收峰。用于沉积HgCdTe的衬底,例如由钼组成的衬底2,由低熔点的金属3固定。然后,将HgCdTe薄膜沉积到基板2上。结果,基板的温度升高。在薄膜的生长过程中,HgCdTe薄膜非常稳定,并且形成了具有高均匀性和高质量结晶性的HgCdTe薄膜。可以代替碳膜4而在由钼制成的基板支架上施加镓,并且可以在真空中对该支架进行热处理,以用复合材料涂覆支架表面。镓和钼的混合物。;版权所有:(C)1993,日本特许厅和日本

著录项

  • 公开/公告号JPH05339095A

    专利类型

  • 公开/公告日1993-12-21

    原文格式PDF

  • 申请/专利权人 NEC CORP;

    申请/专利号JP19920145179

  • 发明设计人 SASAKI NARIHITO;

    申请日1992-06-05

  • 分类号C30B23/08;

  • 国家 JP

  • 入库时间 2022-08-22 04:47:29

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号