Single crystal thin film formation method for semiconductor industries, involves growing single crystal thin film on exposed surface of amorphous thin film by nuclear or molecular beam of specific incidence angle

摘要

An opening (3) is formed on amorphous thin film (2) on single crystal substrate (1), by which a portion of substrate is exposed. Under low pressure, nuclear or molecular beam (6-1-6-3) with incidence angle of 40 deg or less or 25 deg or less, performs epitaxial growth of single crystal thin film (4) on exposed surface, selectively. The molecular and nuclear beams include III and V group elements, respectively. The epitaxial growth of single crystal thin film which consists of III and V group compound semiconductor on exposed surface is performed selectively.