Self-Organized InGaAs/GaAs Quantum Wire Nanostructures Grown by Metal- Organic Vapor Phase Epitaxy.

摘要

We report on observation of new type of InGaAs self-assembled surface nanostructures grown on (001) GaAs by Metal-Organic Vapor Phase Epitaxy. Atomic Force NIicroscopy (AFNI) studies show presence of a homogeneous system of well ordered shaped rectangular nanoislands extended along the 100 direction. Optical properties of the structures studied by photoluminescence (PL) and photoconductivity (PC) spectroscopy indicate presence of 1D electronic states.