Infrared Materials and Devices of III-V Arsenides and Antimonides by Molecular Beam Epitaxy

摘要

Infrared electroabsorption modulation in AlSb/InAs/AlGaSb/GaSb/AlSb stepped quantum wells grown by molecular beam epitaxy was achieved. Molecular beam epitaxial growth of GaInSbBi for 8-12 Micrometers infrared detector applications was demonstrated for the first time. AlAsSb/InAsSb heterojunction diodes were achieved on Si substrates by molecular-beam epitaxy with a suitable breakdown voltage for devise applications. Narrow band gap InAs high electron mobility transistors with heterojunction AlSbAs barriers were demonstrated. AlGaAs/GaAs Npn heterojunction bipolar transistors grown on Si (311) by molecular beam epitaxy with a record emitter-collector breakdown voltage of 13 V were achieved.