首页> 美国政府科技报告 >Sputter Deposition Method for III-V Semiconductor
【24h】

Sputter Deposition Method for III-V Semiconductor

机译:III-V半导体的溅射沉积方法

获取原文

摘要

The major effort in the program has been the development of a microwave source to lower the sputter plasma voltage. I originally proposed an electron gun. However, the electron gun had a fundamental flaw. It extinguished the plasma near its insertion point with a resulting non-uniform deposition.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号