Magnetic Resonance Studies of Mg-Doped GaN Epitaxial Layers Grown by Organometallic Chemical Vapor Deposition; Journal article

摘要

Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5 *10(exp 18) to 5.0 *10(exp 19) /cu cm. The samples were also characterized by secondary-ion-mass spectroscopy (SIMS), temperature-dependent Hall effect, and low-temperature photoluminescence (PL) measurements. EPR at 9 GHz on the conductive films reveals a single line with g.