Defects and Defect Processes in GaN

摘要

Optically detected electron paramagnetic resonance and infrared spectroscopy have been used to probe the microscopic properties of defects in GaN. Irradiation of GaN by 2.5 MeV electrons, in situ at 4.2 K, produces two ODEPR signals that have been assigned to interstitial Ga in two distinct configurations. Models for these configurations and interconversion between them are proposed. In separate experiments, the implantation of protons into GaN, in situ at 20 K, produces a new H vibrational line at 1456/cu cm. This defect has been associated with isolated H in GaN and provides clues about the structure and mobility of H.