Advanced Microstructural Characterization for Development of Improved HgCdTe Detectors and Devices.

摘要

The prime objective of this research is to contribute towards the development of improved HgCdTe (MCT) detectors and devices. Advanced electron microscopy methods, including high-resolution imaging, nanoprobe spectroscopy, and nanoscale elemental mapping, were used to address key issues relating to MCT material growth and processing. These collaborative studies have included: a) Si-based substrates for defect reduction in HgCdTe; b) GaAs-based substrates for growth of HgCdTe; c) Investigation of HgCdSe grown by molecular beam epitaxy; and d) Critical thickness for ZnTe on GaSb(100) and GaSb(211) substrates. These investigations involved leading scientists and engineers from government and industrial laboratories, who prepared samples suitable for systematic microscopy studies. Results from these investigations are briefly summarized as Scientific Progress in the full report.