Current Collapse Induced in AlGaN/GaN High-Electron-Mobility Transistors by Bias Stress; Journal article

摘要

Current collapse is observed to be induced in AlGaN/GaN high- electron-mobility transistors as a result of short-term bias stress. This effect was seen in devices grown by both metalorganic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). The induced collapse appears to be permanent and can be reversed by SiN passivation. The traps responsible for the collapse have been studied by photoionization spectroscopy. For the MOCVD-grown devices, the same traps cause the collapse in both unstressed and stressed devices. These effects are thought to result from hot-carrier damage during stress.