Special Technology Area Review on Spintronics. Report of Department of Defense Advisory Group on Electron Devices Working Group B (Microelectronics)

摘要

The objective of this Advisory Group on Electron Devices (AGED) Working Group B (Microelectronics) Special Technology Area Review (STAR) was to examine the status of spintronics (electronics based on the spin degree of freedom of the electron) as it applies to nonvolatile memories and quantum- based logic and computing. In addition, the information provided at the STAR is expected to be of use to the Services and Department of Defense (DoD) agencies as they formulate an investment strategy for realizing the potential benefits of spin-based technologies for military applications. For example, magnetic tunnel junction (MTJ) based nonvolatile memory has the potential to replace dynamic random access memory (DRAM) and floating-gate nonvolatile memory (Flash). Specifically, the objectives of the STAR were to: (1) Evaluate the present status and progress in spin-based nonvolatile memory applications. (2) Determine the military applications of this disruptive memory technology particularly as it relates to applying the technology in space-based applications. (3) Review the potential for spin qubit-based quantum logic and computing. (4) Identify current technical barriers and impediments and possible breakthroughs in quantum spin-based computing technologies for future military system applications. (5) Develop additional science and technology efforts to expand applications to DoD systems.