Ultrafast Optical Characterization of Wide Bandgap Semiconductors and Polyatomic Molecules

摘要

The focus of this effort was to measure the carrier dynamics in wide bandgap III-nitride materials. Measurements of carrier capture and recombination in InGaN and AlGaN/GaN MQWs revealed a similar carrier capture time for both materials but a recombination time in the AlGaN/GaN system at least a factor of ten faster. Studies of surface plasmonenhanced recombination rates in GaN QWs indicated an acceleration of recombination rates by a factor of 100 simply by placing a silver coating.