Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Sauletekio al. 9-111, Vilnius, LT-10222 Lithuania,Department of Electrical and Computer Engineering, Virginia Commonwealth University, 601 W. Main Str., Richmond, Virginia 23284 USA;
Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Sauletekio al. 9-111, Vilnius, LT-10222 Lithuania;
Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Sauletekio al. 9-111, Vilnius, LT-10222 Lithuania;
Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Sauletekio al. 9-111, Vilnius, LT-10222 Lithuania;
Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Sauletekio al. 9-111, Vilnius, LT-10222 Lithuania;
机译:amorphous掺杂非晶宽带隙半导体(SiC)_(1-x)(AlN)_x的带隙工程及其光发射特性
机译:通过第一原理计算Ultrawide Bandgap Perovskite半导体的电子和光学特性
机译:Ca _xCd _(1-x)O的结构,电子和光学性质及其从半金属到宽带隙半导体的转化
机译:用于表征宽带隙半导体电子特性的非线性光学技术:Ⅲ-氮化物,SiC和钻石
机译:使用电子显微镜技术的宽带凝氮氮化物半导体的结构和光学性质
机译:作为新型潜在的红外非线性光学材料A2SrMIVS4(A = LiNa; MIV = GeSn)同时显示出较宽的带隙和良好的非线性光学响应
机译:III-V氮化物宽带隙半导体的光学和电学特性。年报,1997年4月1日至1998年5月31日