Phonon Limited Performance of III-V Nanowire Transistors

摘要

We use a fully self-consistent three-dimensional quantum mechanical transport formalism to examine the performance of InAs based quantum wire transistors both in the ballistic limit and with phonon scattering included. We present a method for the inclusion of polar optical phonon scattering as a real- space self-energy term. We find that the ballistic performance of the devices can be recovered if the dopants in the system are kept away from the channel entrance and exit. When dopants are present at these key points, we find that the altered carrier energy, particularly in the source, has a significant impact on the device. This ballistic recovery is aided by the fact that at higher energies, polar optical phonon scattering loses its non-locality which leads to a reduced scattering rate in these confined systems.