Performance and RF Reliability of GaN-ON-SiC HEMTs Using Dual-Gate Architectures

摘要

AlGaN/GaN HEMTs on SiC have been fabricated with dual and single gate device geometries. Sub-threshold characteristics and drain bias dependence of large signal parameters were compared to identify differences in electric field. Degradation under RF stress reveals the relative impact of temperature and electric field. The results illustrate the beneficial effects of the dual gate geometry for performance and reliability.