Much Improved Self-Organized In(0.53)Ga(0.47)As Quantum Wire Lasers Grown on (775)B InP Substrates by Molecular Beam Epitaxy

摘要

A self-organized In(0.53)Ga(0.47)As/ (In(0.53)Ga(0.47)As) (2)(In(0.44)Al(0.56)As)(2) quantum wire (QWR) laser was grown on a (775)B InP substrate by molecular beam epitaxy (MBE). Well lattice-matched and flat cladding layers were grown at a rather high temperature (595 degrees C). Lateral confinement potential was induced by a nano-meter scale interface corrugation of InGaAs/(InGaAs)(2)(InAlAs)(2) with an amplitude of 2 nm and a period of 40 nm. A 50 micrometers x 500 micrometers stripe-contact QWR laser with uncoated cleaved mirrors oscillated with a threshold current density (J(th)) of 1.2 kA/sq cm and a lasing wavelength of 1370 nm at 250 K under pulsed current condition.