Solid-State Microwave Annealing of Ion-Implanted 4H-SiC; Journal article

摘要

Solid-state microwave annealing was performed at temperatures up to 2120 deg C for 30 s on ion-implanted 4H SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 deg C is 2.65 nm for 10 micrometers x 10 micrometers atomic force microscopy scans. The sheet resistances measured on Al+- and P+-implanted 4H SiC, annealed by microwaves, are lower than the best conventional furnace annealing results reported in literature. X-ray diffraction spectra indicate alleviation of the lattice damage induced by the ion-implantation and also incorporation of most of the implanted species into substitutional lattice sites.