机译:离子注入SiC的固态微波退火与常规炉退火的比较
Department of Electrical and Computer Engineering George Mason University Fairfax VA 22030 USA;
Department of Electrical and Computer Engineering George Mason University Fairfax VA 22030 USA;
LT Technologies Fairfax VA 22033 USA;
Department of Chemistry and␣Biochemistry George Mason University Fairfax VA 22030 USA;
Sensors and Electron Devices Directorate Army Research Laboratory Adelphi MD 20783 USA;
Sensors and Electron Devices Directorate Army Research Laboratory Adelphi MD 20783 USA;
Metallurgy Division National Institute of Standards and Technology Gaithersburg MD 20899 USA;
Implantation; solid-state microwave annealing; silicon carbide;
机译:离子注入SiC的固态微波退火与常规炉退火的比较
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机译:固态微波退火与离子注入siC常规炉退火的比较
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