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Strain and Quantum Dots Manipulation in Nitride Compounds for Opto- electronic Devices; Final rept. 1 Oct 2004-30 Sep 2007

机译：用于光电器件的氮化物中的应变和量子点操纵;最终的评论。 2004年10月1日至2007年9月30日

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Activities during the project period can be divided into two main areas. The first dealt with quantum structure and optical properties of light sources based on GaInN/AlInGaN quantum well structures. The second area covered research in the room temperature ferromagnetic properties of GaMnN dilute magnetic semiconductors.

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作者
Bedair, S. M.; El-Masry, N. A.;
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年度 2008
页码 p.1-8
总页数 8
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Optical properties; Electrooptics; Nitrides; Semiconductors; Ferromagnetic materials; Ferromagnetism; Room temperature; Light sources; Dilution; Quantum wells; Quantum theory;

机译：光学性质;电光学;氮化物;半导体;铁磁材料;铁磁性;室温;光源;稀释;量子阱;量子理论;

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专利

1. The effects of electronic coupling between capping molecules and quantum dots on the light absorption and emission of octyl, styryl, and 4-ethynylstyryl terminated silicon quantum dots [J] . Thu-Huong Le, Hyun-Dam Jeong Physical chemistry chemical physics: PCCP . 2014,第35期

机译：封端分子与量子点之间电子偶联对辛基，苯乙烯基和4-乙炔基苯乙烯基封端的硅量子点的光吸收和发射的影响
2. The effects of electronic coupling between capping molecules and quantum dots on the light absorption and emission of octyl, styryl, and 4-ethynylstyryl terminated silicon quantum dots [J] . Thu-Huong Le, Hyun-Dam Jeong Physical chemistry chemical physics: PCCP . 2014,第35期

机译：封端分子与量子点之间电子偶联对辛基，苯乙烯基和4-乙炔基苯乙烯基封端的硅量子点的光吸收和发射的影响
3. APS -APS March Meeting 2017 - Event - Coherent probing and manipulation of valley states in silicon double quantum dot devices with fast pulses [J] . Joshua Schoenfield, Blake Freeman, HongWen Jiang, Bulletin of the American Physical Society . 2017,第4期

机译：APS -APS 2017年3月会议-事件-具有快速脉冲的硅双量子点器件中谷态的相干探测和操纵
4. A Critical Comparison Between MOVPE and MBE Growth of III-V nitride Semiconductor Materials for OPTO- Electronic Device Applications [C] . anonymous Symposium on GaN and related alloys . 1999

机译：MOVPE与MBE生长的致力学比较III-V氮化物半导体材料的光电装置应用
5. (Indium,gallium)arsenic/gallium arsenide quantum-dot nanostructures: Strain distribution and electronic structure. [D] . Stoleru, Valeria Gabriela. 2002

机译：（铟，镓）砷/砷化镓量子点纳米结构：应变分布和电子结构。
6. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices [O] . Ana Luz Muñoz-Rosas, Arturo Rodríguez-Gómez, Juan Carlos Alonso-Huitrón 2018

机译：嵌入氮化硅薄膜中的硅量子点与金纳米粒子在发光器件中的耦合增强了电致发光
7. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices [O] . Ana Muñoz-Rosas, Arturo Rodríguez-Gómez, Juan Alonso-Huitrón 2018

机译：从氮化硅薄膜中的硅量子点的增强的电致发光，耦合在发光器件中的金纳米粒子中

Strain and Quantum Dots Manipulation in Nitride Compounds for Opto- electronic Devices; Final rept. 1 Oct 2004-30 Sep 2007

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