Development of Mid-infrared GeSn Light Emitting Diodes on a Silicon Substrate.

摘要

The objective of this research was to develop 1) direct-bandgap Sn-based group-IV material with very low defect densities and 2) a new type of Sn-based group-IV light-emitting diode (LED) structure. Optimization of traditional and hetero- P-i-N structures designed and grown on Ge-buffer Si (001) wafers using molecular beam epitaxy (MBE) with low-temperature growth techniques resulted in thick GeSn films with a defect densities of ~105/cm2, which are believed to be the lowest reported in the literature. A new type of planar strip LED was fabricated that exhibits better performance than conventional vertical LEDs, can be integrated with most planar electronic devices, and can also function as an optical cavity.