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Status of Structural Analysis of Substrates and Film Growth Inputs for GaN Device Development Program

机译:GaN器件开发项目基板结构分析和薄膜生长输入的现状

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This report covers the x-ray diffraction crystallographic analysis of semiconductor wafers involved in our team's project to produce gallium nitride (GaN) wide bandgap devices. The wafers were examined for crystal quality by symmetric and asymmetric GaN scans for each quadrant of the 18 wafers. Data comparisons made include the figures of merit (FOM) for GaN substrates compared with those of GaN films grown on the substrates, and the homoepitaxial GaN films' FOMs compared with those from heteroepitaxial films. The analysis produced the best FOMs for GaN for our lab to date: 39' (arc seconds) symmetric and 58' asymmetric. The good homoepitaxial GaN film quality was approximately 3 to 8 times better than that of good heteroepitaxial films. The heteroepitaxial GaN film quality was shown to be suited for our experimental needs. At a 95% confidence level, we were able to show a bias between the quality of the wafer quadrants of the Hydride Vapor Phase epitaxially grown GaN substrates. The microstructural quality of the material inputs as measured by x- ray diffraction is currently on track to play its part in the development of novel GaN-based devices.

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