Analytical Study of Zinc-Diffusion in Gallium Arsenide and the Electrical Properties of the Resulting Diffused Layers

摘要

This study undertakes: first, to establish the relationship of these anomalous profiles to the diffusion equation; second, to calculate the relationship among the parameters of the zinc-diffused layers; and third, to measure the resistivity of GaAs as a function of zinc concentration. The results of this study provide: first, a procedure for calculating concentration profiles for various surface concentrations for a system such as zinc in GaAs when only two experimentally measured profiles are known; second, design data concerning the electrical properties of the zinc-diffused layers; and third, measurements of resistivity as a function of zinc concentration in heavily doped GaAs.