Use of the Capacitance-Voltage Method for Investigating MOS Structures

摘要

The report is intended as a guide in the application of the capacitance-voltage method for determining the electronic properties of metal-oxide-semiconductor structures. The shape and position of capacitance-voltage relationships in C vs V and 1/C to the 2nd power vs V coordinates is presented for eight structural and surface conditions, and qualitative (in some cases also quantitative) correlation of curve parameters to particular MOS models is indicated. Although actually measured CV curves are not expected to coincide fully with these idealized models, agreement in essential curve characteristics usually points to the predominance of that model in practical MOS structures. The report also contains a comprehensive literature reference on this subject. (Author)