Epitaxial Silicon and Gallium Arsenide Thin Films on Insulating Ceramic Substrates

摘要

A state-of-the-art literature survey is presented on the success of epitaxial deposition of silicon and gallium arsenide thin films on ceramic substrates for device applications. The electrical, thermal, chemical and crystallographic properties of sapphire, spinel, beryllium oxide, magnesium oxide, diamond, quartz, silicon carbide, aluminum silicate glass, glazed ceramic and other miscellaneous ceramic substrate materials are presented. A master flow chart is developed to identify each variable at each stage of the film/substrate preparation and resultant device fabrication processes. A series of charts identifying each of these variables as reported in the literature for each substrate material is presented. A complete bibliographic review of silicon epitaxial deposition, independent of substrate, is also presented. (Author)