Thin-Film Memory Elements with Nondestructive Read-Out

摘要

The possible methods of accomplishing nondestructive information readout in thin-film storage devices are not limited to the utilization of double-layer films. Storage locations are known which consist of single-layer films in which information readout without destruction occurs by reversible rotation of the vector of magnetization by an angle of less than 90 deg by means of a transverse field less than the film's field of anisotropy. A number of other storage calls are also known. Such elements, however, demand high uniformity in the magnetic properties of the films and high stability in the magnetization reversal fields. The storage elements examined in this article made less rigid demands. The advantage of nondestructive readout is that it makes computers faster acting because there is no need for regeneration of destroyed information The article deals with memory elements of thin ferromagnetic films (17% Fe - 80% Ni - 3% Co deposited at 10 to the -5th to -6th power mm Hg).