The Silicon Micro-Hall Device -- Design, Fabrication, and Applications

摘要

A family of silicon devices, the micro-Hall devices, are described. These include the diffused, diffused-epitaxial, isolation-diffused-epitaxial, mesa-epitaxial, and silicon-on-sapphire isolation-diffused structures. The design and fabrication of these devices are presented in complete detail. The theory of the Hall effect and its applications to the theory of fast neutron displacement damage to silicon is presented. A quantitative model of radiation damage in the form of spherical intrinsic voids representing the damage clusters is described. Three applications of the isolation-diffused-epitaxial silicon micro-Hall device are discussed. The characteristics of the silicon micro-Hall device as magnetic sensor are presented. This application requires a careful compensation for voltages due to the misalignment of the measuring arms. (Author)