Silicon-CMOS Compatible Transfer-Free Fabrication of Nanocrystalline Graphene Field-Effect Devices for Smart Gas-Sensor Applications

摘要

We report on a method to mass-fabricate graphene-based ultra-sensitive gas sensors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor deposition (CCVD) several hundred nanocrystalline graphene field-effect transistors (ncGFETs), which are very sensitive to various toxic gases, have been fabricated directly on a single wafer and are subsequently characterized. This approach allows low-cost integration of graphene-devices for gas sensing applications in a silicon CMOS environment.