Low Temperature Investigations on Epitaxial Silicon using the Micro-Hall Device

摘要

The report is concerned with the feasibility of using the micro-Hall device, introduced by Colclaser and Southward, as a tool for determining important electrical characteristics of epitaxial silicon at low temperatures. The theory of carrier concentration and mobility as a function of temperature in the low temperature range is presented. A contact diffusion mask is introduced which eliminates the formation of an unwanted junction at the substrate contacts and aids in the formation of ohmic contacts. The refrigerator (cryo-tip) used to obtain low temperatures and a special designed specimen holder which connects to the cryo-tip are described. (Author)