Traps in Fast-Neutron Irradiated GaAs Schottky Diodes.

摘要

GaAs Schottky diodes were irradiated with an essentially gamma-free beam of 5 MeV neutrons and the resultant trap (and defect) structure analyzed. The trap structure is shown to consist of energetically discrete levels, but the levels are found not to operate independently. A new defect model is proposed based on coupled-trap levels and is shown to be in good agreement with the observations. On the basis of this model, the following values for discrete trap levels were determined: 175, 220, 325, 380 and 460 mV below the conduction band. (Author)