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Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

机译：GA2O3肖特基二极管的光敏性：中子辐射前后深度受体陷阱的影响

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E. B. Yakimov; A. Y. Polyakov; I. V. Shchemerov; N. B. Smirnov; A. A. Vasilev; P. S. Vergeles; E. E. Yakimov; A. V. Chernykh; A. S. Shikoh; F. Ren; S. J. Pearton;
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1. Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation [J] . E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, APL Materials . 2020,第11期

机译：GA2O3肖特基二极管的光敏性：中子辐射前后深度受体陷阱的影响
2. On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors [J] . Yakimov E. B., Polyakov A. Y., Shchemerov I. V., Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2021,第1期

机译：关于GA2O3肖特基二极管探测器光敏增益的性质：深层受体捕集孔的影响
3. Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (211) and (311) oriented GaAs substrates [J] . R. Boumaraf, N. Sengouga, R.H. Mari, Superlattices and microstructures . 2014,第jana期

机译：（211）和（311）取向的GaAs衬底上的深陷阱和温度对p型掺杂Si的GaAs肖特基二极管的电容的影响
4. Neutron and proton irradiation: effects on the active layer width and electric field distribution in semi-insulating GaAs Schottky diodes [C] . Castaldini, A., Cavallini, . 1998

机译：中子和质子辐照：对半绝缘GaAs肖特基二极管中活性层宽度和电场分布的影响
5. DEVELOPMENT OF A DEEP TRAP MODEL FOR THE CAPACITANCE CHARACTERISTICS OF SILICON POSITIVE P - N - POSITIVE N DIODES IRRADIATED WITH FAST NEUTRONS [D] . CRABBE, JAMES STANLEY -1

机译：快中子辐照硅正P-N-正N二极管电容特性的深陷阱模型的建立。
6. Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation [O] . T. Harada, S. Ito, A. Tsukazaki 2019

机译：PdCoO2 /β-Ga2O3肖特基二极管在高温工作中的电偶极效应
7. Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to$10^16$n/cm$^2$by 1 MeV Neutrons [O] . F. Nava, A. Castaldini, A. Cavallini, 2006

机译：4H-SiC肖特基二极管的辐射检测特性辐照高达10美元$ N / cm $ ^ 2 $ 1 MEV中子
8. Traps in Fast-Neutron Irradiated GaAs Schottky Diodes. [R] . Ludman, J. E., Nowak, W. B. 1974

机译：快中子辐照Gaas肖特基二极管中的陷阱。

Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

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