1.06Micron Intensified Silicon Target TV Camera Tube.

摘要

The objective of this contract was the fabrication and testing of negative electron affinity (NEA) II-V transmission secondary emission (TSE) dynodes which are to be incorporated into a silicon intensifier tube. The photocathode is to be an NEA GaAs semitransparent cathode. A reliable technique for fabricating GaAs dynodes has been developed which employs a combination of chemical and electromechanical etching. Uniformly thin smooth 0.5-to 0.8-cm diameter TSE dynodes 2to 10micrometers thick have been made. TSE gains of 2to 20have been observed in the 5-to 8-keV primary energy range for flat-band GaAs TSE dynodes. The low gains at these energies are the direct result of very high surface recombination velocities at the inactive surface. Seven image tubes have been built:five proximity-focused image intensifier tubes and two SIT tubes with a GaAs photocathode and a GaAs TSE dynode. The design and fabrication of each of these tubes are discussed. (Author)