1.06Micron Intensified Silicon Target TV Camera Tube.

摘要

The development of III-V SIT tubes has progressed. Successful work has been performed on both Si and GaAs transmission secondary emission (TSE) dynodes. Gains of 200at 10keV have been seen with Si dynodes. Accompanying every Si activation to negative electron affinity (NEA),however,are large thermionic emission densities of about 10to the minus 10th power amps per sq cm. Gains of 112at 20keV have been seen with GaAs TSE dynodes,and GaAs promises to be a very suitable material. Dark currents from GaAs are 10to the minus 15th power amps per sq cm which presents no problem. Two prototype proximity focused III-V SIT tubes have been made,showing limiting resolution at 350TV lines. These tubes demonstrate the feasibility of the proposed development program. Present III-V semi-transparent photocathode sensitivities are >0.5% at 1.06microns,and an exploration has begun to discover means of incorporating these photocathodes into image intensifier tubes. (Author)