Diffusion-Limited LPE Growth of InP for Microwave Devices.

摘要

Liquid phase epitaxial InP has been grown using a multiple-well, bottom-of-the-melt, sliding substrate apparatus. The diffusion coefficient of phosphorus in an Indium-rich solution Dp was determined for the first time, as a function of temperature, from LPE data acquired over the temperature range 750 C to 715 C. By applying the diffusion model to various growth schemes, we were able to conclude that a step-cooled growth technique was the optimal method for achieving microwave device quality InP epi-layers.