Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells

摘要

The invention relates to semiconductor technology and can be used, in particular, in devices for converting solar radiation into electrical energy.The method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells consists in that the p-InP layer is grown on a substrate, made in the form of a p+InP plate with crystallographic orientation (100), misorientation of 3…5° in the direction (110) and charge carrier concentration of 1018 cm-3, is deposited on the frontal part of the plate by the quasi-closed volume method a n+CdS layer, is deposited on the reverse side of the plate an ohmic contact of Ag+5%Zn, is thermally treated at a temperature of 450°C, is deposited the ohmic contact of In onto the n+CdS layer, is thermally treated at a temperature of 250°C, and is deposited by the electron beam evaporation method, at a temperature of 300°C, a SiO2 antireflection layer.