Growth of Thick Single-Crystal Layers of Yttrium Iron Garnet by Liquid Phase Epitaxy.

摘要

Single crystal films of YIG (yttrium iron garnet) up to about 100 um thick have been grown on (III) GGG (gadolinium gallium garnet) substrates by the usual LPE (liquid phase epitaxy) method of isothermal dipping in a PbO-B2O3 fluxed melt. Although interface instability arising from constitutional supersaturation is believed to exist during film growth by this method, the film surfaces were found to be generally smooth. Evidence of possible interface breakdown was restricted to the periphery of the wafers and a few other isolated locations. (Author)