The bismuth due to liquid phase epitaxial modulo amp; yttrium iron garnet crystal film rearing manner

摘要

PURPOSE:To efficiently grow the title crystal film in a short time, by using a double crucible, equipping a circulation hole and a shutter between an outer crucible and an inner crucible, controlling an amount of solution in the outer crucible introduced and feeding the solution to the inner crucible with the progress of growth of crystal film in the inner crucible. CONSTITUTION:A double crucible consisting of an outer crucible 1 and an inner crucible 4 is prepared and a circulation hole 2 and a shutter 3 are set between the outer crucible 1 and the inner crucible 4. Then, a melt 5 for producing Bi-Y-Fe garnet crystal film is put in the inner crucible 4 and a melt 6 having a higher composition ratio of Bi and Y than of the melt 5 is fed to the outer crucible 1. Then, a substrate is immersed in the surface of melt 6 in the inner crucible 4 and the Bi-Y-Fe garnet crystal film is grown on the substrate by liquid phase epitaxial method. According to the growth of crystal film in the inner crucible 4, opening and closing time of the shutter 3 is controlled and the melt 6 in the outer crucible 1 is fed to the inner crucible 4 so as to make the composition of the melt 5 constant.