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Studies of Electron Screening Effects on the Electron Mobility in Silicon Surface Inversion Layers.

机译：电子筛选对硅表面反转层电子迁移率的影响研究。

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作者
Sah, C. T.; Shiue, C. C.;
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年度 1976
页码 1-10
总页数 10
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Electron mobility; Silicon; Band theory of solids; Transport properties; Reprints;

机译：电子迁移率;硅;固体带理论;输运性质;重印;

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2. Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations [J] . Olivier Bonno, Sylvain Barraud Denis Mariolle and Frangois Andrieu Journal of Applied Physics . 2008,第6期

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3. Phonon-Limited Electron Mobility Behavior and Inherent Mobility Reduction Mechanism of Ultrathin Silicon-on-Insulator Layer with (111) Surface and Ultrathin Germanium-on-Insulator Layer with (001) Surface [J] . Tsuyoshi Yamamura, Shingo Sato, Yasuhisa Omura Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2007,第12期

机译：具有（111）表面的超薄绝缘体上硅层和具有（001）表面的超薄绝缘体上锗的声子限制电子迁移行为和固有迁移率降低机理
4. Calculation of the Electron Mobility in Silicon Inversion Layers: Dependence on Surface Orientation, Channel Direction, and Stress [C] . Yang, I.-J., Peng, . 2005

机译：硅反型层中电子迁移率的计算：取决于表面取向，沟道方向和应力
5. Part I: Electron Magnetic Resonance Studies of OxygenRadical-Matrix Motions and Interactionsin Polymers and on SurfacesPart II: Electron Spin Resonance Characterization ofRadicals on Silicon Dioxide Surfaces [D] . CHAMULITRAT, WALEE. 1985

机译：第一部分：氧的电子磁共振研究 r n自由基基体的运动和相互作用 r n聚合物以及表面上的 r n第二部分：二氧化硅表面上的 r n自由基的电子自旋共振表征
6. Surface ultrastructure of silicone rubber aortic valve poppetts after long-term implantation. A scanning electron microscope study of four poppets. [O] . S P Allwork, R Norton 1976

机译：长期植入后硅橡胶主动脉瓣的表面超微结构突然上升。四个提升阀的扫描电子显微镜研究。
7. Thermally activated conductance of a silicon inversion layer by electrons excited above the mobility edge [O] . Niederer H.H.J.M., Mattey A.P.M., Sparnaay M.J. 1981

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8. Electronic Surface Properties of III-V Semiconductors: Excitonic Effects, Band-Bending Effects and Interactions with Au and O Adsorbate Layers. [R] . Gudat, W., Eastman, D. E. 1976

机译：III-V半导体的电子表面特性：激子效应，带弯曲效应以及与au和O吸附层的相互作用。

Studies of Electron Screening Effects on the Electron Mobility in Silicon Surface Inversion Layers.

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