Low-Dose n-Type Ion Implantation into Cr-Doped GaAs Substrates.

机译：低剂量n型离子注入Cr掺杂Gaas衬底。

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Some results of low-dose Se(+) implants into several different Cr-doped ingots are presented. These results illustrate the substrate-related variations that are generally observed; methods of reducing or eliminating these substrate effect are presented. (Author)

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作者
Donnelly, J. P.; Bozler, C. O.; Lindley, W. T.;
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年度 1977
页码 1-5
总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Ion implantation; Gallium arsenides; Substrates; N type semiconductors; Doping; Chromium; Selenium; Reprints; Semiconductor doping;

机译：离子注入;砷化镓;衬底; N型半导体;掺杂;铬;硒;重印;半导体掺杂;

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1. Annealing characteristics of the implant-isolated n-type GaAs layers: Effects of ion species and implant temperature [J] . S. Ahmed, B.J. Sealy, R. Gwilliam Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2003,第May期

机译：注入隔离n型GaAs层的退火特性：离子种类和注入温度的影响
2. Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon - art. no. 195211 [J] . Pellegrino P., Lalita J., Hallen A., Physical Review, B. Condensed Matter . 2001,第19期

机译：低剂量MeV自离子注入n型硅中空位相关缺陷的退火动力学-艺术。没有。 195211
3. Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon - art. no. 195211 [J] . Pellegrino P., Lalita J., Hallen A., Physical Review, B. Condensed Matter . 2001,第19期

机译：低剂量MeV自离子注入n型硅中空位相关缺陷的退火动力学-艺术。没有。 195211
4. Implant isolation of both n-type InP and InGaAs by iron irradiation: effect of post-implant annealing temperature [C] . Too P., Ahmed S., Jakiela R., Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on . 2003

机译：铁辐射对n型InP和InGaAs的植入物隔离：植入后退火温度的影响
5. InGaAs/InAlAs quantum wells for 1.3 micron electro-absorption modulators on GaAs substrates. [D] . Shen, Lei. 1997

机译：GaAs衬底上用于1.3微米电吸收调制器的InGaAs / InAlAs量子阱。
6. Mechanical Behavior of Undoped n-Type GaAs under the Indentation of Berkovich and Flat-Tip Indenters [O] . Lixia Xu, Lingqi Kong, Hongwei Zhao, 2019

机译：在Berkovich和平坦尖端压痕下的未掺杂n型GaAs的力学行为
7. Implant Isolation of Both n-Type InP and InGaAs by Iron Irradiation: Effect of Post-Implant Annealing Temperature [O] . Too, P, Ahmed, S, Jakiela, R, 2003

机译：铁辐射对n型InP和InGaAs的植入物隔离：植入后退火温度的影响

Low-Dose n-Type Ion Implantation into Cr-Doped GaAs Substrates.

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