In sub 1-x Ga sub x As sub y P sub 1-y-InP Double-Heterostructure Lasers.

摘要

The fabrication and performance of stripe-geometry room-temperature GaInAsP-InP CW lasers emitting at 1.15 micrometers and pulsed lasers emitting at 1.24 micrometers is described. These heterostructures were fabricated by liquid phase epitaxial growth on melt-grown InP substrates, and the stripes were defined by using proton bombardment to produce high-resistance current confinement layers. Room-temperature CW lasing is obtained on several different wafers covering the wavelength interval 1.10 20% and output powers of approx. 8 mW have been observed from the devices. (Author)