$hbox{Al}_{y}hbox{Ga}_{1-y}hbox{N/Al}_{x} hbox{Ga}_{1-x}hbox{N/GaN}$ Double-Heterostructure Detector With Three Ultraviolet Spectral Band Responses

摘要

In this paper, an $hbox{Al}_{y}hbox{Ga}_{1-y}hbox{N/Al}_{x} hbox{Ga}_{1-x}hbox{N/GaN}break (y > x)$ double-heterostructure (DH) p-p-i-n ultraviolet (UV) detector is designed based on the influence of the polarization effect on the AlGaN/GaN heterostructure. The influences of doping concentration and Al composition in AlGaN on the photoelectric response of the UV detector are calculated and discussed by selfconsistent solving of the Schrödinger–Poisson equation and solving the carriers'' continuity equation. The calculation results show that the $ hbox{Al}_{y}hbox{Ga}_{1-y}hbox{N/Al}_{x}hbox{Ga}_{1-x}hbox{N/GaN}$ DH p-p-i-n UV detector presents a three-UV-response wavelength region with increasing bias voltage, and the three-UV-response wavelength region can be abnormally adjusted from 200 to 365 nm by changing the Al composition in the $hbox{Al}_{y}hbox{Ga}_{1-y}hbox{N}$ and $hbox{Al}_{x}hbox{Ga}_{1-x}hbox{N}$ layers. The calculation results are verified by the Korona''s experimental testing results at the end of this paper.