Analytical Technique for the Design of DMOS Transistors.

摘要

An analysis is presented of double-diffused MOS (DMOS) transistors that features an accurate forecast of the current-voltage behavior in various DMOS structures. The specific DMOS transistors analyzed include both p-n and p-p(-) type asymmetrical devices and p-n-p and p-p(-)-p type symmetrical devices. The analysis is based on one-dimensional approximate theory and is carried out by a computer using numerical calculation of the charge and the potential along the channel. The program is efficient and calculations are accomplished rapidly. The results of the analysis correlate well with measurements on n-channel p-n type and p-p(-)-p type DMOS transistors. The analysis allows comparisons to be made between the various DMOS structures and is demonstrated as an effective tool for optimizing device structure, channel lengths and doping profiles in DMOS transistors. (Author)