Compact, High-Power, Low-Cost 295 nm DUV Laser by Harmonic Conversion of High Power VECSELs

摘要

We have successfully demonstrated a compact high-power CW DUV source emitting at 295 nm exceeding the targeted objective. The laser is based on frequency-quadrupled optically pumped vertical external cavity surface emitting source. A highly-strained InGaAs/GaAs multi-quantum well semiconductor laser operating at 1178 nm in a single frequency is developed. By intracavity frequency doubling of the laser, multi-watt yellow laser emitting at 589 nm is generated. The single-frequency, intracavity-doubled 589-nm output is further converted to 295 nm in an external resonator using BaB2O4. Up to 136 mW of continuous-wave, single-frequency output at 295 nm was obtained from a frequency quadrupled optically pumped semiconductor laser.